Analysis of I-V on Basic Electrical Circuit Using Ni Multisim App in Apply Physics


  • Indah Nurhidayati Politeknik Ilmu Pelayaran Semarang
  • Aryanti Fitrianingsih Politeknik Ilmu Pelayaran Semarang
  • Sinta Marito Siagian Politeknik Negeri Medan
  • Samaria Chrisna HS Politeknik Negeri Medan



electrical circuit, Ni-Multisim, current, voltage


Utilization of the NI Multisim application is useful for designing a circuit, starting with designing schematic circuits and analyzing and simulating. Increasing the use of technology so that it is very much needed in physics learning at the Polytechnic of Maritime Sciences on electrical circuit material. This study aims to measure and characterize I-V currents in an electrical circuit by comparison with laboratories and multisim applications. Research activities were carried out using the I-V Current and Voltage comparison analysis method using theory in the manual formula, practice with the circuit kit, and NI Multisim simulation by building a circuit scheme on circuit composition namely resistance, voltage source, and using voltage measuring instruments and current measuring instruments which are all regulated in such a way concerning the theory of electric circuits. The results of this study are that there is a difference in the total resistance value between the values in the circuit kit module practice with the use of Multisim. But the difference is very slight with an error of about 1% for series circuits, and about 4.4% for parallel circuits. Voltage values in series circuits using NI Multisim circuit kits and applications have differences with errors ranging from 0 to 3.3 %. The comparison of the voltage values in direct measurements of the circuit kit and the NI Multisim simulation has the lowest error of 0% and the highest of 20% at the 6V source in R2.




How to Cite

Nurhidayati, I., Fitrianingsih, A., Siagian, S. M., & HS, S. C. (2023). Analysis of I-V on Basic Electrical Circuit Using Ni Multisim App in Apply Physics. RSF Conference Series: Engineering and Technology, 3(1), 114–120.